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2019

Direct tunneling modulation of semiconductor lasers

Author: Junyi Qiu, Milton Feng, Nick Holonyak
Published In: Applications and Technology (CLEO)
Date of Publication: 5 May 2019
Citation: Junyi Qiu,Milton Feng, Nick Holonyak(2019). Direct tunneling modulation of semiconductors lasers. https://doi.org/10.1364/CLEO_AT.2019.ATu3P.2
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Optical NOR gate transistor laser integrated circuit

Author: Ardy Winoto, Junyi Qiu, Dufei Wu, Milton Feng
Published In: QELS_Fundamental Science (CLEO)
Date of Publication: 5 May 2019
Citation: Ardy Winoto, Junyi Qiu, Dufei Wu, Milton Feng(2019). Optical NOR gate transistor laser integrated circuit. https://doi.org/10.1364/CLEO_AT.2019.JTh2A.62
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Integrated photonics of transistor laser, detector and active load for all

Author: Ardy Winoto, Junyi Qiu, Dufei Wu, Yu-Ting Peng, Milton Feng
Published In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Date of Conference: 22-25 April 2019
Date Added to IEEE Xplore: 19 August 2019
Citation: Ardy Winoto, Junyi Qiu, Dufei Wu, Yu-Ting Peng, Milton Feng(2019). Integrated photonics of transistor laser, detector and active load for all
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Transistor laser electrical and optical bistable switching

Author: Milton Feng, Nick Holonyak, Jr.Mong-Kai WuFei Tan
Published No: US 2019 / 0123513 A1
Date of Publication: 25 April 2019
Citation: Milton Feng, Nick Holonyak, Jr.Mong-Kai WuFei Tan(2019). Transistor laser electrical and optical bistable switching. US 2019 / 0123513 A1
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Transistor laser-integrated photonics for optical logic: unlocking unique electro-optical integration potential to open up new possibilities for logic processors

Author: Ardy Winoto, Junyi Qiu, Dufei Wu, Milton Feng
Published In: IEEE Nanotechnology Magazine ( Volume: 13 , Issue: 2 )
Date of Publication: 3 April 2019
Citation: Ardy Winoto, Junyi Qiu, Dufei Wu, Milton Feng(2019). Transistor laser-integrated photonics for optical logic: unlocking unique electro-optical integration potential to open up new possibilities for logic processors. https://doi.org/10.1109/MNANO.2019.2891978
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2018

Oxide-Confined VCSELs for High-Speed Optical Interconnects

Author: Milton Feng, Chao-Hsin Wu, Nick Holonyak
INSPEC Accession Number: 17649905
Published In: IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 3 , June 2018 )
Date of Publication: 19 March 2018
Citation Milton Feng, Chao-Hsin Wu, Nick Holonyak(2018). Oxide-Confined VCSELs for High-Speed Optical Interconnects. IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 3 , June 2018) doi:10.1109/JQE.2018.2817068
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Tunneling Modulation of Transistor Lasers: Theory and Experiment

Author: Milton Feng, Junyi Qiu, Nick Holonyak
INSPEC Accession Number: 17612871
Published In: IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 )
Date of Publication: 27 February 2018
Citation Milton Feng, Junyi Qiu, Nick Holonyak (2018). Tunneling Modulation of Transistor Lasers: Theory and Experiment.IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 ). doi:10.1109/JQE.2018.2809471
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All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors

Author: Milton Feng ; Ardy Winoto ; Junyi Qiu ; Yu-Ting Peng ; Nick Holonyak
INSPEC Accession Number: 17896272
Published In: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Date of Conference: 16-19 April 2018
Date Added to IEEE Xplore: 05 July 2018
Citation Milton Feng ; Ardy Winoto ; Junyi Qiu ; Yu-Ting Peng ; Nick Holonyak (2018). All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors. doi:10.1109/VLSI-TSA.2018.8403847
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Electro-Optical Bistability in Semiconductor Laser

Author: Curtis Wang ; Milton Feng ; Nick Holonyak
INSPEC Accession Number: 18024587
Published In: 2018 Conference on Lasers and Electro-Optics (CLEO)
Date of Conference: 13-18 May 2018
Date Added to IEEE Xplore: 09 August 2018
Citation Curtis Wang ; Milton Feng ; Nick Holonyak(2018).Electro-Optical Bistability in Semiconductor Laser.2018 Conference on Lasers and Electro-Optics (CLEO).
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2017

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

Author: M. Feng, N. Holonyak Jr., and C. Y. Wang
J. Appl. Phys. 122, 103102 (2017)
Accepted: August 2017
Published online: 12 September 2017
Citation: Milton Feng, Junyi Qiu, Nick Holonyak. (2017). Tunneling Modulation of Transistor Lasers: Theory and Experiment.IEEE Journal of Quantum Electronics 54:2, 1-14.doi.org/10.1063/1.4989521
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Resonance-free optical response of a vertical cavity transistor laser

Author: M. Feng, Cheng-Han Wu, M. K. Wu, Chao-Hsin Wu, and N. Holonyak Jr
Appl. Phys. Lett. 111, 121106 (2017)
Accepted: September 2017
Published online: 22 September 2017
Citation: M. Feng, Cheng-Han Wu, M. K. Wu, Chao-Hsin Wu, and N. Holonyak Jr. (2017). Resonance-free optical response of a vertical cavity transistor laser.Appl. Phys. Lett. 111, 121106. doi.org/10.1063/1.5004133
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Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C)

Author: Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang
INSPEC Accession Number: 17103909
Date of Conference: 10-12 July 2017
Date Added to IEEE Xplore: 21 August 2017
Citation: Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang (2017). Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C). doi:10.1109/PHOSST.2017.8012715
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2016

Tunneling modulation of a quantum-well transistor laser

Author: Milton Feng, J. Qiu, C. Y. Wang, and Nick Holonyak
J. Appl. Phys. 120, 204501 (2016)
Accepted: November 2016
Published online: November 2016
Citation: Feng, M., Qiu, J., Wang, C. Y., & Holonyak, N. (2016). Tunneling modulation of a quantum-well transistor laser. Journal of Applied Physics, 120(20), 204501. doi:10.1063/1.4967922
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850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °C

Author: Michael Liu, Curtis Y. Wang, Milton Feng, Nick Holonyak
2016 Conference on Lasers and Electro-Optics (CLEO)
Date of Conference: 5-10 June 2016
Date Added to IEEE Xplore: 19 December 2016
Citation: Liu, M., Wang, C. Y., Feng, M., & Holonyak, N. (2016). 850 nm Oxide-Confined VCSELs with 50 Gb/s Error-Free Transmission Operating up to 85 °C. Conference on Lasers and Electro-Optics. doi:10.1364/cleo_si.2016.sf1l.6
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50 Gb/s Error-Free Data Transmission of 850 nm Oxide-Confined VCSELs

Author: Michael Liu, Curtis Y. Wang, Milton Feng, Nick Holonyak
Optical Fiber Communications Conference and Exhibition (OFC), 2016
Date of Conference: 20-24 March 2016
Date Added to IEEE Xplore: 11 August 2016
Citation: Liu, M., Wang, C. Y., Feng, M., & Holonyak, N. (2016). 50 Gb/s Error-Free Data Transmission of 850 nm Oxide-Confined VCSELs. Optical Fiber Communication Conference. doi:10.1364/ofc.2016.tu3d.2
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Method and Apparatus for Optical Coupling and Opto-Electronic Conversion

Inventor: Gabriel Walter
Original Assignee: Quantum Electro Opto Systems Sdn. Bhd.
Publication number: US9304267 B2
Publication date: 5 April 2016
Filing date: 10 September 2013
Also published as: CN104620520A, US20140086589, WO2014043089A1
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Light Emitting and Lasing Semiconductor Methods and Devices

Inventor: Gabriel Walter
Original Assignee: Quantum Electro Opto Systems Sdn. Bhd.
Publication number: US9299876 B2
Publication date: 29 March 2016
Filing date: 2 December 2013
Also published as: CN103119722A, EP2619796A2, US8618575, US20120068151, US20140162388, WO2012039754A2, WO2012039754A3
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2015

Devices and processes for electronic-photonic integration

Author: J.M. Dallesasse, B. Kesler, G.L. Su, J.A. Carlson, P.L. Lam, G. Walter
IEEE Photonics Conference (IPC), 2015
Date of Conference: 4-8 October 2015
Date Added to IEEE Xplore: 12 November 2015
Citation: Dallesasse, J. M., Kesler, B., Su, G. L., Carlson, J. A., Lam, P. L., & Walter, G. (2015). Devices and processes for electronic-photonic integration. 2015 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2015.7323599
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Vertical cavity transistor laser for on-chip OICs

Author: Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak
2015 Summer Topicals Meeting Series (SUM)
Date of Conference: 13-15 July 2015
Date Added to IEEE Xplore: 10 September 2015
Citation: Feng, M., Liu, M., Wang, C., & Holonyak, N. (2015). Vertical cavity transistor laser for on-chip OICs. 2015 IEEE Summer Topicals Meeting Series (SUM). doi:10.1109/phosst.2015.7248238
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Heterogeneous Integration Methods and Devices

Author: John Dallesasse, Poh Lian Lam, Ben Kesler, Guan Lin Su, Gabriel Walter
Integrated Photonics Research, Silicon and Nanophotonics 2015
Date of Conference: 27 June–1 July 2015
Citation: Dallesasse, J., Lam, P. L., Kesler, B., Su, G. L., & Walter, G. (2015). Heterogeneous Integration Methods and Devices. Advanced Photonics 2015. doi:10.1364/iprsn.2015.it2a.1
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Progress on heterogeneous integration: Devices and processes

Author: J.M. Dallesasse, Ben Kesler, Poh Lian Lam, Gabriel Walter
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference
Date of Conference: 1-4 June 2015
Date Added to IEEE Xplore: 01 October 2015
Citation: Dallesasse, J. M., Kesler, B., Lam, P. L., & Walter, G. (2015). Progress on heterogeneous integration: Devices and processes. 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). doi:10.1109/edssc.2015.7285067
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Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs

Author: Fei Tan, Mong-Kai Wu, Curtis Wang, Michael Liu, Milton Feng, Nick Holonyak
2015 Conference on Lasers and Electro-Optics (CLEO)
Date of Conference: 10-15 May 2015
Date Added to IEEE Xplore: 13 August 2015
Citation: Tan, F., Wu, M., Wang, C., Liu, M., Feng, M., & Holonyak, N. (2015). Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs. Cleo: 2015. doi:10.1364/cleo_si.2015.sf1i.6
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Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s

Author: Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters (Volume: 27, Issue: 6, March15, 15 2015)
Publication Year: 2015
Page(s): 600 - 603
Date of Publication: 08 January 2015
Citation: Bambery, R., Wang, C. Y., Tan, F., Feng, M., & Holonyak, N. (2015). Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s. IEEE Photonics Technology Letters, 27(6), 600-603. doi:10.1109/lpt.2014.2385833
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2014

Electronic-Photonic Integration Using the Light-Emitting Transistor

Author: John Dallesasse, Poh Lian Lam, and Gabriel Walter
Latin America Optics and Photonics Conference 2014
Date of Conference: 16–21 November 2014
Citation: Dallesasse, J., Lam, P. L., & Walter, G. (2014). Electronic-Photonic Integration Using the Light-Emitting Transistor. Latin America Optics and Photonics Conference. doi:10.1364/laop.2014.ltu3a.2
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Quantum-well transistor laser for optical interconnect and photonic integrated circuits

Author: John Dallesasse, Poh Lian Lam, and Gabriel Walter
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Date of Conference: 28 Sept.-1 Oct. 2014
Date Added to IEEE Xplore: 11 December 2014
Citation: Feng, M., Then, H. W., Tan, F., Wu, M. K., Bambery, R., & Holonyak, N. (2014). Quantum-well transistor laser for optical interconnect and photonic integrated circuits. 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). doi:10.1109/bctm.2014.6981297
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Transistor Laser With 13.5-Gb/s Error-Free Data Transmission

Author: Fei Tan, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 15, Aug.1, 1 2014 )
Publication Year: 2019
Page(s): 1542 - 1545
Date of Publication: 06 June 2014
Citation: Tan, F., Bambery, R., Feng, M., & Holonyak, N. (2014). Transistor Laser With 13.5-Gb/s Error-Free Data Transmission. IEEE Photonics Technology Letters, 26(15), 1542-1545. doi:10.1109/lpt.2014.2328666
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Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage

Author: Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 10, May 15, 2014 )
Publication Year: 2014
Page(s): 1003 - 1006
Date of Publication: 24 March 2014
Citation: Wu, M., Liu, M., Bambery, R., Feng, M., & Holonyak, N. (2014). Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage. IEEE Photonics Technology Letters, 26(10), 1003-1006. doi:10.1109/lpt.2014.2312360
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Spur-Free Dynamic Range Measurements of the Hybrid Light Emitting Transistor

Author: Poh Lian Lam, J.M. Dallesasse and Gabriel Walter
CS MANTECH Conference 2014
Date of Conference: 19-22 May 2014
Citation: Lam, P. L., Dallesasse, J. M., & Walter, G. (2014). Spur-Free Dynamic Range Measurements of the Hybrid Light Emitting Transistor. 2014 CS MANTECH Conference. Retrieved from csmantech.org/OldSite/Digests/2014/papers/026.pdf
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780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission

Author: Michael Liu, Mong-Kai Wu, Fei Tan, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 7, April 1, 2014 )
Publication Year: 2014
Page(s): 702 - 705
Date of Publication: 29 January 2014
Citation: Liu, M., Wu, M., Tan, F., Bambery, R., Feng, M., & Holonyak, N. (2014). 780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission. IEEE Photonics Technology Letters, 26(7), 702-705. doi:10.1109/lpt.2014.2303169
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2013

Transistor Laser for Electronic-Photonic Integrated Circuits

Author: Milton Feng, Nick Holonyak
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Date of Conference: 13-16 Oct. 2013
Date Added to IEEE Xplore: 11 November 2013
Citation: Feng, M., & Holonyak, N. (2013). Transistor Laser for Electronic-Photonic Integrated Circuits. 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). doi:10.1109/csics.2013.6659247
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50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]

Author: M. George Craford, Russell D. Dupuis, Milton Feng, Fred A. Kish, Joy Laskar
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013
Page(s): 2154 - 2157
Date of Publication: 16 September 2013
Citation: Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A., & Laskar, J. (2013). 50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]. Proceedings of the IEEE, 101(10), 2154-2157. doi:10.1109/jproc.2013.2274908
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850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission

Author: Fei Tan, Mong Kai Wu, Michael Liu, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters (Volume: 26, Issue: 3, Feb.1, 2014)
Publication Year: 2013
Page(s): 289 - 292
Date of Publication: 5 September 2013
Citation: Tan, F., Wu, M., Liu, M., Feng, M., & Holonyak, N. (2014). 850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission. IEEE Photonics Technology Letters, 26(3), 289-292. doi:10.1109/lpt.2013.2280726
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The Transistor Laser: Theory and Experiment

Author: Han Wui Then, Milton Feng, Nick Holonyak
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013
Page(s): 2271 - 2298
Date of Publication: 28 August 2013
Citation: Then, H. W., Feng, M., & Holonyak, N. (2013). The Transistor Laser: Theory and Experiment. Proceedings of the IEEE, 101(10), 2271-2298. doi:10.1109/jproc.2013.2274935
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The III–V Alloy p–n Diode Laser and LED Ultimate Lamp

Author: Nick Holonyak
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013
Page(s): 2158 - 2169
Date of Publication: 22 August 2013
Citation: Holonyak, N. (2013). The III–V Alloy p–n Diode Laser and LED Ultimate Lamp. Proceedings of the IEEE, 101(10), 2158-2169. doi:10.1109/jproc.2013.2274909
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Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Author: Rohan Bambery, Fei Tan, Milton Feng, John M. Dallesasse, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 25, Issue: 9, May 1, 2013 )
Publication Year: 2013
Page(s): 859 - 862
Date of Publication: 20 March 2013
Citation: Bambery, R., Tan, F., Feng, M., Dallesasse, J. M., & Holonyak, N. (2013). Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature. IEEE Photonics Technology Letters, 25(9), 859-862. doi:10.1109/lpt.2013.2252887
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2012

Voltage Modulation of a Vertical Cavity Transistor Laser Via Intra-Cavity Photon-Assisted Tunneling

Author: Mong Kai Wu, Milton Feng, and Nick Holonyak, Jr.
Appl. Phys. Lett. 101, 081102 (2012)
Received: 4 June 2012
Accepted: 18 June 2012
Published online: 20 August 2012
Citation: Wu, M. K., Feng, M., & Holonyak, N. (2012). Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling. Applied Physics Letters, 101(8), 081102. doi:10.1063/1.4745791
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Surface Emission Vertical Cavity Transistor Laser

Author: Mong-Kai Wu, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 24, Issue: 15, Aug.1, 2012 )
Publication Year: 2012
Page(s): 1346 - 1348
Date of Publication: 08 June 2012
Citation: Wu, M., Feng, M., & Holonyak, N. (2012). Surface Emission Vertical Cavity Transistor Laser. IEEE Photonics Technology Letters, 24(15), 1346-1348. doi:10.1109/lpt.2012.2203356
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2011

The transistor laser

Author: Milton Feng and Nick Holonyak, Jr.
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)
Date of Conference: 22-26 May 2011
Date Added to IEEE Xplore: 07 July 2011
Citation: Feng, M., & Holonyak, N. (2011). The transistor laser. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). doi:10.1109/cleoe.2011.5942547
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Bandfilling and Photon-Assisted Tunneling In A Quantum-Well Transistor Laser

Author: Milton Feng, Rohan Bambery and Nick Holonyak, Jr.
Appl. Phys. Lett. 98, 123505 (2011)
Received: 20 January 2011
Accepted: 4 March 2011
Published online: 22 March 2011
Citation: Feng, M., Bambery, R., & Holonyak, N. (2011). Bandfilling and photon-assisted tunneling in a quantum-well transistor laser. Applied Physics Letters, 98(12), 123505. doi:10.1063/1.3569949
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InP/InAIGaAs Light-Emitting Transistors And Transistor Lasers With A Carbon-Dopes Base Layer

Author: Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, Forest Dixon, Milton Feng, and Nick Holonyak
J. Appl. Phys. 109, 063106 (2011)
Received: 5 January 2011
Accepted: 2 February 2011
Published online: 21 March 2011
Citation: Huang, Y., Ryou, J., Dupuis, R. D., Dixon, F., Feng, M., & Holonyak, N. (2011). InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer. Journal of Applied Physics, 109(6), 063106. doi:10.1063/1.3561368
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Temperature Dependence Of a High-Performance Narrow-Stripe (1 μm) Single Quantum-Well Transistor Laser

Author: Milton Feng, Nick Holonyak, Jr. and Adam James
Appl. Phys. Lett. 98, 051107 (2011)
Received: 18 August 2010
Accepted: 31 August 2010
Published online: 3 February 2011
Citation: Feng, M., Holonyak, N., & James, A. (2011). Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser. Applied Physics Letters, 98(5), 051107. doi:10.1063/1.3528206
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2010

Design And Operation Of Distributed Feedback Transistor Lasers

Author: Forest Dixon, Milton Feng and Nick Holonyak, Jr.
J. Appl. Phys. 108, 093109 (2010)
Received: 15 June 2010
Accepted: 22 September 2010
Published online: 4 November 2010
Citation: Dixon, F., Feng, M., & Holonyak, N. (2010). Design and operation of distributed feedback transistor lasers. Journal of Applied Physics, 108(9), 093109. doi:10.1063/1.3504608
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Stochastic Base Doping And Quantum-Well Enhancement Of Recombination In An n-p-n Light-Emitting Transistor Or Transistor Laser

Author: Han Wui Then, Choa Hsin Wu, Milton Feng, Nick Holonyak, Jr. and Gabriel Walter
Appl. Phys. Lett. 96, 263505 (2010)
Received: 12 April 2010
Accepted: 8 June 2010
Published online: 28 June 2010
Citation: Then, H. W., Wu, C. H., Feng, M., Holonyak, N., & Walter, G. (2010). Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96(26), 263505. doi:10.1063/1.3458708
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Distributed Feedback Transistor Laser

Author: Forest Dixon, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 96, 241103 (2010)
Received: 5 May 2010
Accepted: 24 May 2010
Published online: 14 June 2010
Citation: Dixon, F., Feng, M., & Holonyak, N. (2010). Distributed feedback transistor laser. Applied Physics Letters, 96(24), 241103. doi:10.1063/1.3453656
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Microwave Circuit Model Of The Three-Port Transistor Laser

Author: Han Wui Then, Milton Feng and Nick Holonyak, Jr.
J. Appl. Phys. 107, 094509 (2010)
Received: 10 December 2009
Accepted: 23 February 2010
Published online: 10 May 2010
Citation: Then, H. W., Feng, M., & Holonyak, N. (2010). Microwave circuit model of the three-port transistor laser. Journal of Applied Physics, 107(9), 094509. doi:10.1063/1.3371802
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Physics Of Base Charge Dynamics In The Three Port Transistor Laser

Author: Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 96, 113509 (2010)
Received: 30 October 2009
Accepted: 24 February 2010
Published online: 17 March 2010
Citation: Then, H. W., Feng, M., & Holonyak, N. (2010). Physics of base charge dynamics in the three port transistor laser. Applied Physics Letters, 96(11), 113509. doi:10.1063/1.3364143
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2009

4-GHz Modulation Bandwidth of Integrated 2X2 LED Array

Author: Choa Hsin Wu, Gabriel Walter , Han Wui Then, Nick Holonyak Jr. and Milton Feng
IEEE Photonics Technology Letters (Volume: 21, Issue: 24, Dec.15, 2009)
Publication Year: 2009
Page(s): 1834 – 1836
Date of Publication: 10 November 2009
Citation: Wu, C., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). 4-GHz Modulation Bandwidth of Integrated 2X2 LED Array. IEEE Photonics Technology Letters, 21(24), 1834-1836. doi:10.1109/lpt.2009.2034385
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Resonance-Free Frequency Response Of a Semiconductor Laser

Author: Milton Feng, Han Wui Then, Nick Holonyak, Jr., Adam James and Gabriel Walter
Appl. Phys. Lett. 95, 033509 (2009)
Received: 16 May 2009
Accepted: 29 June 2009
Published online: 21 July 2009
Citation: Feng, M., Then, H. W., Holonyak, N., Walter, G., & James, A. (2009). Resonance-free frequency response of a semiconductor laser. Applied Physics Letters, 95(3), 033509. doi:10.1063/1.3184580
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4.3 GHz Optical Bandwidth Light Emitting Transistor

Author: Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 241101 (2009)
Received: 29 January 2009
Accepted: 17 April 2009
Published online: 15 June 2009
Citation: Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94(24), 241101. doi:10.1063/1.3153146
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Tilted-Charge High Speed (7 GHz) Light Emitting Diode

Author: Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 231125 (2009)
Received: 27 April 2009
Accepted: 26 May 2009
Published online: 12 June 2009
Citation: Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). Tilted-charge high speed (7 GHz) light emitting diode. Applied Physics Letters, 94(23), 231125. doi:10.1063/1.3154565
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Device performance of light emitting transistors with C-doped and Zn-doped base layers

Author: Y. Huang, J.-H. Ryou, R. D. Dupuis, F. Dixon, N. Holonyak, M. Feng
Indium Phosphide & Related Materials, 2009. IPRM '09.(IEEE)
Date of Conference: 10-14 May 2009
Date Added to IEEE Xplore: 29 May 2009
Citation: Huang, Y., Ryou, J., Dupuis, R. D., Dixon, F., Holonyak, N., & Feng, M. (2009). Device performance of light emitting transistors with C-doped and Zn-doped base layers. 2009 IEEE International Conference on Indium Phosphide & Related Materials. doi:10.1109/iciprm.2009.5012449
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Scaling of Light Emitting Transistor For Multigigahertz Optical Bandwidth

Author: Choa Hsin Wu, Gabriel Walter, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 171101 (2009)
Received: 2 March 2009
Accepted: 9 April 2009
Published online: 27 April 2009
Citation: Wu, C. H., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). Scaling of light emitting transistor for multigigahertz optical bandwidth. Applied Physics Letters, 94(17), 171101. doi:10.1063/1.3126642
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High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes.

Author: Coskun Kocabas, Simon Dunham, Qing Cao, Kurt Cimino, Xinning Ho, Hoon-Sik Kim, Dale Dawson, Joseph Payne, Mark Stuenkel, Hong Zhang, Tony Banks, Milton Feng, Slava V Rotkin, John A Rogers
Nano Lett., 2009, 9 (5), pp 1937–1943
Received: 13 January 2009
Published in print: 13 May 2009
Published online: 8 April 2009
Citation: Kocabas, C., Dunham, S., Cao, Q., Cimino, K., Ho, X., Kim, H. et al. (2009). High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes. Nano Letters, 9(5), 1937-1943. doi:10.1021/nl9001074
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Electrical-Optical Signal Mixing and Multiplication (2 → 22 GHz) With a Tunnel Junction Transistor Laser

Author: Han Wui Then, Chao Hsin Wu, Gabriel Walter, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 101114 (2009)
Received: 16 January 2009
Accepted: 26 February 2009
Published online: 13 March 2009
Citation: Then, H. W., Wu, C. H., Walter, G., Feng, M., & Holonyak, N. (2009). Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser. Applied Physics Letters, 94(10), 101114. doi:10.1063/1.3100294
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Tunnel Junction Transistor Laser

Author: Han Wui Then, Nick Holonyak Jr. and Milton Feng, Choa Hsin Wu, and Gabriel Walter
Appl. Phys. Lett. 94, 041118 (2009)
Received: 20 December 2008
Accepted: 9 January 2009
Published online: 29 January 2009
Citation: Feng, M., Holonyak, N., Then, H. W., Wu, C. H., & Walter, G. (2009). Tunnel junction transistor laser. Applied Physics Letters, 94(4), 041118. doi:10.1063/1.3077020
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Bandwidth Extension By Trade-Off Of Electrical and Optical Gain In a Transistor Laser: Three - Terminal Control

Author: Han Wui Then, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 94, 013509 (2009)
Received: 19 November 2008
Accepted: 18 December 2008
Published online: 9 January 2009
Citation: Then, H. W., Feng, M., & Holonyak, N. (2009). Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control. Applied Physics Letters, 94(1), 013509. doi:10.1063/1.3068489
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2008

Optical Bandwidth Enhancement Of Heterojunction Bipolar Transistor Laser Operation With An Auxiliary Base Signal

Author: Han Wui Then, Nick Holonyak, Jr., Milton Feng, and Gabriel Walter
Appl. Phys. Lett. 93, 163504 (2008)
Received: 30 July 2008
Accepted: 24 September 2008
Published online: 22 October 2008
Citation: Then, H. W., Walter, G., Feng, M., & Holonyak, N. (2008). Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal. Applied Physics Letters, 93(16), 163504. doi:10.1063/1.3000635
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Transistor Laser With Emission Wavelength At 1544 nm

Author: Forest Dixon, Milton Feng, Nick Holonyak, Jr., Yong Huang, Xue Bing Zhang, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 93, 021111 (2008)
Received: 16 April 2008
Accepted: 25 June 2008
Published online: 15 July 2008
Citation: Dixon, F., Feng, M., Holonyak, N., Huang, Y., Zhang, X. B., Ryou, J. H., & Dupuis, R. D. (2008). Transistor laser with emission wavelength at 1544nm. Applied Physics Letters, 93(2), 021111. doi:10.1063/1.2958228
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InAlGaAs/InP Light-Emitting Transistors Operating Near 1.55 µm

Author: Yong Huang, Xue-Bing Zhang, Jae-Hyun Ryou, Russell D. Dupuis, Forest Dixon, Nick Holonyak, Jr., and Milton Feng
Appl. Phys. 103 114505 (2008)
Received: 31 December 2007
Accepted: 4 April 2008
Published online: 9 June 2008
Citation: Huang, Y., Zhang, X., Ryou, J., Dupuis, R. D., Dixon, F., Holonyak, N., & Feng, M. (2008). InAlGaAs∕InP light-emitting transistors operating near 1.55μm. Journal of Applied Physics, 103(11), 114505. doi:10.1063/1.2939243
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2007

Collector Characteristics and The Differential Optical Gain Of a Quantum-Well Transistor Laser

Author: Han Wui Then, Gabriel Walter, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 91, 243508 (2007)
Received: 24 October 2007
Accepted: 22 November 2007
Published online: 12 December 2007
Citation: Then, H. W., Walter, G., Feng, M., & Holonyak, N. (2007). Collector characteristics and the differential optical gain of a quantum-well transistor laser. Applied Physics Letters, 91(24), 243508. doi:10.1063/1.2824817
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Modulation Of High Current Gain (β>49) Light-Emitting InGaN/GaN Heterojunction Bipolar Transistors

Author: B. F. Chu-Kung, Chao Hsin Wu, Gabriel Walter, Milton Feng, Nick Holonyak, Jr., T. Chung, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 91, 232114 (2007)
Received: 25 October 2007
Accepted: 14 November 2007
Published online: 6 December 2007
Citation: Chu-Kung, B. F., Wu, C. H., Walter, G., Feng, M., Holonyak, N., Chung, T. et al. (2007). Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors. Applied Physics Letters, 91(23), 232114. doi:10.1063/1.2821380
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Optical Bandwidth Enhancement By Operation And Modulation Of The First Excited State Of a Transistor Laser

Author: Han Wui Then, Nick Holonyak Jr. and Milton Feng
Appl. Phys. Lett. 91, 183505 (2007)
Received: 13 September 2007
Accepted: 9 October 2007
Published online: 30 October 2007
Citation: Then, H. W., Feng, M., & Holonyak, N. (2007). Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Applied Physics Letters, 91(18), 183505. doi:10.1063/1.2805014
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Charge Control Analysis Of Transistor Laser Operation

Author: Milton Feng, Nick Holonyak, Jr., Han Wui Then and Gabriel Walter
Appl. Phys. Lett. 91, 053501 (2007)
Received: 1 May 2007
Accepted: 7 July 2007
Published online: 30 July 2007
Citation: Feng, M., Holonyak, N., Then, H. W., & Walter, G. (2007). Charge control analysis of transistor laser operation. Applied Physics Letters, 91(5), 053501. doi:10.1063/1.2767172
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Experimental Determination Of The Effective Minority Carrier Lifetime In The Operation Of a Quantum-Well n-p-n Heterojunction Bipolar Light-Emitting Transistor Of Varying Base Quantum- Well Design and Dopping

Author: Han Wui Then, Nick Holonyak, Jr., Milton Feng, and Chao Hsin Wu
Appl. Phys. Lett. 91, 033505 (2007)
Received: 7 June 2007
Accepted: 22 June 2007
Published online: 18 July 2007
Citation: Then, H. W., Feng, M., Holonyak, N., & Wu, C. H. (2007). Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping. Applied Physics Letters, 91(3), 033505. doi:10.1063/1.2759263
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Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser

Author: Adam James, Nick Holonyak, Jr., Milton Feng and Gabriel Walter
Photonics Technology Letters, IEEE
Volume: 19
Issue: 9 - May 1, 2007
Citation: James, A., Holonyak, N., Feng, M., & Walter, G. (2007). Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser. IEEE Photonics Technology Letters, 19(9), 680-682. doi:10.1109/lpt.2007.895049
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Photon-Assisted Breakdown, Negative Resistance, and Switching In a Quantum-Well Transistor Laser

Author: Adam James, Gabriel Walter, Milton Feng and Nick Holonyak, Jr
Appl. Phys. Lett. 90, 152109 (2007)
Received: 26 January 2007
Accepted: 8 March 2007
Published online: 11 April 2007
Citation: James, A., Walter, G., Feng, M., & Holonyak, N. (2007). Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser. Applied Physics Letters, 90(15), 152109. doi:10.1063/1.2721364
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Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser

Author: Adam James, Nick Holonyak, Milton Feng, Gabriel Walter
IEEE Photonics Technology Letters (Volume: 19, Issue: 9, May1, 2007)
Publication Year: 2007
Page(s): 680 - 682
Date of Publication: 10 April 2007
Citation: James, A., Holonyak, N., Feng, M., & Walter, G. (2007). Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser. IEEE Photonics Technology Letters, 19(9), 680-682. doi:10.1109/lpt.2007.895049
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Chirp In a Transistor Laser: Franz-Keldysh Reduction Of The Line Width Enhancement

Author: Gabriel Walter, Adam James, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 90, 091109 (2007)
Received: 30 October 2006
Accepted: 24 January 2007
Published online: 1 March 2007
Citation: Walter, G., James, A., Holonyak, N., & Feng, M. (2007). Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement. Applied Physics Letters, 90(9), 091109. doi:10.1063/1.2709964
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2006

Carrier Lifetime and Modulation Bandwidth Of a Quantum Well AlGaAs/InGaP/GaAs/InGaAs Transistor Laser

Author: Milton Feng, Nick Holonyak, Jr., Adam James, Kurt Cimino, Gabriel Walter and Richard Chan
Appl. Phys. Lett. 89, 113504 (2006)
Received: 9 May 2006
Accepted: 25 July 2006
Published online: 12 September 2006
Citation: Feng, M., Holonyak, N., James, A., Cimino, K., Walter, G., & Chan, R. (2006). Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser. Applied Physics Letters, 89(11), 113504. doi:10.1063/1.2346369
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Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting Transistors

Author: B. F. Chu-Kung,Milton Feng,Gabriel Walter,Nick Holonyak,T. Chung,Jae Hyun Ryou, J. Limb,D. Yoo, S.-C. Shen,Russell D. Dupuis,D. Keogh,and P. M. Asbeck
Appl. Phys. Lett. 89, 082108 (2006)
Received: 24 February 2006
Accepted: 27 June 2006
Published online: 25 August 2006
Citation: Chu-Kung, B. F., Feng, M., Walter, G., Holonyak, N., Chung, T., Ryou, J. et al. (2006). Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors. Applied Physics Letters, 89(8), 082108. doi:10.1063/1.2336619
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High-Speed (/spl ges/1 GHz) Electrical and Optical Adding, Mixing, and Processing of Square-Wave Signals With a Transistor Laser

Author: Milton Feng, Nick Holonyak, Jr., Richard Chan, Adam James and Gabriel Walter
IEEE Photonics Technology Letters (Volume: 18, Issue: 11, June 2006)
Publication Year: 2006
Page(s): 1240 - 1242
Date of Publication: 26 June 2006
Citation: Feng, M., Holonyak, N., Chan, R., James, A., & Walter, G. (2006). High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser. IEEE Photonics Technology Letters, 18(11), 1240-1242. doi:10.1109/lpt.2006.875333
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Collector Breakdown In The Heterojunction Bipolar Transistor Laser

Author: Gabriel Walter, Adam James, Nick Holonyak, Jr., Milton Feng, and Richard Chan
Appl. Phys. Lett. 88, 232105 (2006)
Received: 15 March 2006
Accepted: 15 April 2006
Published online: 6 June 2006
Citation: Walter, G., James, A., Holonyak, N., Feng, M., & Chan, R. (2006). Collector breakdown in the heterojunction bipolar transistor laser. Applied Physics Letters, 88(23), 232105. doi:10.1063/1.2210079
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Collector Current Map of Gain and Stimulated Recombination On The Base Quantum Well Transision of Transistor Laser

Author: Riched Chan, Milton Feng, Nick Holonyak, Jr., Adam James, and Gabriel Walter
Appl. Phys. Lett. 88, 143508 (2006)
Received: 30 November 2005
Accepted: 28 February 2006
Published online: 5 April 2006
Citation: Chan, R., Feng, M., Holonyak, N., James, A., & Walter, G. (2006). Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Applied Physics Letters, 88(14), 143508. doi:10.1063/1.2191448
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Signal Mixing in a Multiple Input Transistor Laser Near Threshold

Author: Milton Feng, Nick Holonyak, Jr., Richard Chan, Adam James, and Gabriel Walter
Appl. Phys. Lett. 88, 063509 (2006)
Received: 14 October 2005
Accepted: 9 December 2005
Published online: 8 February 2006
Citation: Feng, M., Holonyak, N., Chan, R., James, A., & Walter, G. (2006). Signal mixing in a multiple input transistor laser near threshold. Applied Physics Letters, 88(6), 063509. doi:10.1063/1.2171834
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The Transistor Laser

Author: Milton Feng, Nick Holonyak, Jr
Spectrum, IEEE
Volume: 43
Issue: 2 Feb. 2006
Citation: Holonyak, N., & Feng, M. (2006). The Transistor Laser. IEEE Spectrum, 43(2), 50-55. doi:10.1109/mspec.2006.1584362
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Visible Spectrum Light-Emitting Transistors

Author: Forest Dixon, Richard Chan, Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Xue Bing Zhang, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 88, 012108 (2006)
Received: 21 September 2005
Accepted: 3 November 2005
Published online: 5 January 2006
Citation: Dixon, F., Chan, R., Walter, G., Holonyak, N., Feng, M., Zhang, X. B., . . . Dupuis, R. D. (2006). Visible spectrum light-emitting transistors. Applied Physics Letters, 88(1), 012108. doi:10.1063/1.2158704
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2005

Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition

Author: X.B. Zhang, J.H. Ryo, G. Walter, N. Holonyak, R.D. Dupuis
International Conference on Indium Phosphide and Related Materials, 2005.
Date of Conference: 8-12 May 2005
Date Added to IEEE Xplore: 24 October 2005
Citation: Zhang, X., Ryou, J., Walter, G., Holonyak, N., & Dupuis, R. (n.d.). Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition. International Conference on Indium Phosphide and Related Materials, 2005. doi:10.1109/iciprm.2005.1517508
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Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

Author: Jungho Kim, P.K. Kondratko, Shun Lien Chuang, G. Walter, N. Holonyak, R.D. Heller, X.B. Zhang, R.D. Dupuis
IEEE Journal of Quantum Electronics (Volume: 41, Issue: 11, Nov. 2005)
Publication Year: 2005
Page(s): 1369 - 1379
Date of Publication: 24 October 2005
Citation: Kim, J., Kondratko, P., Chuang, S. L., Walter, G., Holonyak, N., Heller, R., et al. (2005). Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing. IEEE Journal of Quantum Electronics, 41(11), 1369-1379. doi:10.1109/jqe.2005.857067
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Room Temperature Continuous Wave Operation of a Heterojunction Bipolar Transistor Laser

Author: Milton Feng, Nick Holonyak, Jr., Gabriel Walter, and Richard Chan
Appl. Phys. Lett. 87, 131103 (2005)
Received: 11 July 2005
Accepted: 9 August 2005
Published online: 20 September 2005
Citation: Feng, M., Holonyak, N., Walter, G., & Chan, R. (2005). Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Applied Physics Letters, 87(13), 131103. doi:10.1063/1.2058213
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Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

Author: P.K. Kondratko, Shun-Lien Chuang, G. Walter, N. Holonyak, R.D. Heller, Xuebing Zhang, R.D. Dupuis
IEEE Photonics Technology Letters (Volume: 17, Issue: 5, May 2005)
Publication Year: 2005
Page(s): 938 - 940
Date of Publication: 25 April 2005
Citation: Kondratko, P., Chuang, S., Walter, G., Holonyak, N., Heller, R., Zhang, X., & Dupuis, R. (2005). Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser. IEEE Photonics Technology Letters, 17(5), 938-940. doi:10.1109/lpt.2005.844328
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Microwave Operation and Modulation of a Transistor Laser

Author: Richard Chan, Milton Feng, Nick Holonyak, Jr., and Gabriel Walter
Appl. Phys. Lett. 86, 131114 (2005)
Received: 16 November 2004
Accepted: 7 February 2005
Published online: 25 March 2005
Citation: Chan, R., Feng, M., Holonyak, N., & Walter, G. (2005). Microwave operation and modulation of a transistor laser. Applied Physics Letters, 86(13), 131114. doi:10.1063/1.1889243
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2004

Tunneling injection quantum-dot laser: Theory and experiment

Author: S.L. Chuang, P.K. Kondratko, J. Kim, G. Walter, J. Elkow, N. Holonyak, R.D. Heller, X.B. Zhang, R.D. Dupuis
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004.
Date of Conference: 11 Nov. 2004
Date Added to IEEE Xplore: 20 December 2004
Citation: Chuang, S., Kondratko, P., Kim, J., Walter, G., Elkow, J., Holonyak, N., et al. (2004). Tunneling injection quantum-dot laser: theory and experiment. The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004. doi:10.1109/leos.2004.1363392
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Laser Operation of a Heterojunction Bipolar Light-Emitting Transistor

Author: Gabriel Walter, Nick Holonyak, Jr., Milton Feng, and Richard Chan
Appl. Phys. Lett. 85, 4768 (2004)
Received: 21 July 2004
Accepted: 23 August 2004
Citation: Walter, G., Holonyak, N., Feng, M., & Chan, R. (2004). Laser operation of a heterojunction bipolar light-emitting transistor. Applied Physics Letters, 85(20), 4768-4770. doi:10.1063/1.1818331
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Type-II GaAsSb/InP Heterojunction Bipolar Light-Emitting Transistor

Author: Milton Feng, Nick Holonyak, Jr., B. Chu-Kung, Gabriel Walter, and Riched Chan
Appl. Phys. Lett. 84, 4792 (2004)
Received: 17 February 2004
Accepted: 15 April 2004
Published online: 21 May 2004
Citation: Feng, M., Holonyak, N., Chu-Kung, B., Walter, G., & Chan, R. (2004). Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84(23), 4792-4794. doi:10.1063/1.1760595
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Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor

Author: Milton Feng, Nick Holonyak, Jr., and Riched Chan
Appl. Phys. Lett. 84, 1952 (2004)
Received: 17 November 2003
Accepted: 7 January 2004
Citation: Feng, M., Holonyak, N., & Chan, R. (2004). Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84(11), 1952-1954. doi:10.1063/1.1669071
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