Resources & Publications



2016


850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °C

Author : Michael Liu, Curtis Y. Wang, Milton Feng, Nick Holonyak
2016 Conference on Lasers and Electro-Optics (CLEO)
Date of Conference: 5-10 June 2016; Date Added to IEEE Xplore: 19 December 2016

Citation: Liu, M., Wang, C. Y., Feng, M., & Holonyak, N. (2016). 850 nm Oxide-Confined VCSELs with 50 Gb/s Error-Free Transmission Operating up to 85 °C. Conference on Lasers and Electro-Optics. doi:10.1364/cleo_si.2016.sf1l.6

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50 Gb/s Error-Free Data Transmission of 850 nm Oxide-Confined VCSELs

Author : Michael Liu, Curtis Y. Wang, Milton Feng, Nick Holonyak
Optical Fiber Communications Conference and Exhibition (OFC), 2016
Date of Conference: 20-24 March 2016; Date Added to IEEE Xplore: 11 August 2016

Citation: Liu, M., Wang, C. Y., Feng, M., & Holonyak, N. (2016). 50 Gb/s Error-Free Data Transmission of 850 nm Oxide-Confined VCSELs. Optical Fiber Communication Conference. doi:10.1364/ofc.2016.tu3d.2

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Method and Apparatus for Optical Coupling and Opto-Electronic Conversion

Inventors: Gabriel Walter; Original Assignee: Quantum Electro Opto Systems Sdn. Bhd.
Publication number: US9304267 B2; Publication date: 5 April 2016; Filing date: 10 September 2013
Also published as CN104620520A, US20140086589, WO2014043089A1

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Light Emitting and Lasing Semiconductor Methods and Devices

Inventors: Gabriel Walter; Original Assignee: Quantum Electro Opto Systems Sdn. Bhd.
Publication number: US9299876 B2; Publication date: 29 March 2016; Filing date: 2 December 2013
Also published as CN103119722A, EP2619796A2, US8618575, US20120068151, US20140162388, WO2012039754A2, WO2012039754A3

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2015


Devices and processes for electronic-photonic integration

Author : J.M. Dallesasse, B. Kesler, G.L. Su, J.A. Carlson, P.L. Lam, G. Walter
IEEE Photonics Conference (IPC), 2015
Date of Conference: 4-8 October 2015; Date Added to IEEE Xplore: 12 November 2015

Citation: Dallesasse, J. M., Kesler, B., Su, G. L., Carlson, J. A., Lam, P. L., & Walter, G. (2015). Devices and processes for electronic-photonic integration. 2015 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2015.7323599

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Vertical cavity transistor laser for on-chip OICs

Author : Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak
2015 Summer Topicals Meeting Series (SUM)
Date of Conference: 13-15 July 2015; Date Added to IEEE Xplore: 10 September 2015

Citation: Feng, M., Liu, M., Wang, C., & Holonyak, N. (2015). Vertical cavity transistor laser for on-chip OICs. 2015 IEEE Summer Topicals Meeting Series (SUM). doi:10.1109/phosst.2015.7248238

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Heterogeneous Integration Methods and Devices

Author : John Dallesasse, Poh Lian Lam, Ben Kesler, Guan Lin Su, Gabriel Walter
Integrated Photonics Research, Silicon and Nanophotonics 2015
Date of Conference: 27 June–1 July 2015

Citation: Dallesasse, J., Lam, P. L., Kesler, B., Su, G. L., & Walter, G. (2015). Heterogeneous Integration Methods and Devices. Advanced Photonics 2015. doi:10.1364/iprsn.2015.it2a.1

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Progress on heterogeneous integration: Devices and processes

Author : J.M. Dallesasse, Ben Kesler, Poh Lian Lam, Gabriel Walter
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference
Date of Conference: 1-4 June 2015; Date Added to IEEE Xplore: 01 October 2015

Citation: Dallesasse, J. M., Kesler, B., Lam, P. L., & Walter, G. (2015). Progress on heterogeneous integration: Devices and processes. 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). doi:10.1109/edssc.2015.7285067

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Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs

Author : Fei Tan, Mong-Kai Wu, Curtis Wang, Michael Liu, Milton Feng, Nick Holonyak
2015 Conference on Lasers and Electro-Optics (CLEO)
Date of Conference: 10-15 May 2015; Date Added to IEEE Xplore: 13 August 2015

Citation: Tan, F., Wu, M., Wang, C., Liu, M., Feng, M., & Holonyak, N. (2015). Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs. Cleo: 2015. doi:10.1364/cleo_si.2015.sf1i.6

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Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s

Author : Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters (Volume: 27, Issue: 6, March15, 15 2015)
Publication Year: 2015; Page(s): 600 - 603; Date of Publication: 08 January 2015

Citation: Bambery, R., Wang, C. Y., Tan, F., Feng, M., & Holonyak, N. (2015). Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s. IEEE Photonics Technology Letters, 27(6), 600-603. doi:10.1109/lpt.2014.2385833

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2014


Electronic-Photonic Integration Using the Light-Emitting Transistor

Author : John Dallesasse, Poh Lian Lam, and Gabriel Walter
Latin America Optics and Photonics Conference 2014
Date of Conference: 16–21 November 2014

Citation: Dallesasse, J., Lam, P. L., & Walter, G. (2014). Electronic-Photonic Integration Using the Light-Emitting Transistor. Latin America Optics and Photonics Conference. doi:10.1364/laop.2014.ltu3a.2

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Quantum-well transistor laser for optical interconnect and photonic integrated circuits

Author : John Dallesasse, Poh Lian Lam, and Gabriel Walter
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
Date of Conference: 28 Sept.-1 Oct. 2014; Date Added to IEEE Xplore: 11 December 2014

Citation: Feng, M., Then, H. W., Tan, F., Wu, M. K., Bambery, R., & Holonyak, N. (2014). Quantum-well transistor laser for optical interconnect and photonic integrated circuits. 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). doi:10.1109/bctm.2014.6981297

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Transistor Laser With 13.5-Gb/s Error-Free Data Transmission

Author : Fei Tan, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 15, Aug.1, 1 2014 )
Publication Year: 2014; Page(s): 1542 - 1545; Date of Publication: 06 June 2014

Citation: Tan, F., Bambery, R., Feng, M., & Holonyak, N. (2014). Transistor Laser With 13.5-Gb/s Error-Free Data Transmission. IEEE Photonics Technology Letters, 26(15), 1542-1545. doi:10.1109/lpt.2014.2328666

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Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage

Author : Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 10, May 15, 2014 )
Publication Year: 2014; Page(s): 1003 - 1006; Date of Publication: 24 March 2014

Citation: Wu, M., Liu, M., Bambery, R., Feng, M., & Holonyak, N. (2014). Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage. IEEE Photonics Technology Letters, 26(10), 1003-1006. doi:10.1109/lpt.2014.2312360

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Spur-Free Dynamic Range Measurements of the Hybrid Light Emitting Transistor

Author : Poh Lian Lam, J.M. Dallesasse and Gabriel Walter
CS MANTECH Conference 2014
Date of Conference: 19-22 May 2014

Citation: Lam, P. L., Dallesasse, J. M., & Walter, G. (2014). Spur-Free Dynamic Range Measurements of the Hybrid Light Emitting Transistor. 2014 CS MANTECH Conference. Retrieved from csmantech.org/OldSite/Digests/2014/papers/026.pdf

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780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission

Author : Michael Liu, Mong-Kai Wu, Fei Tan, Rohan Bambery, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 26, Issue: 7, April 1, 2014 )
Publication Year: 2014; Page(s): 702 - 705; Date of Publication: 29 January 2014

Citation: Liu, M., Wu, M., Tan, F., Bambery, R., Feng, M., & Holonyak, N. (2014). 780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission. IEEE Photonics Technology Letters, 26(7), 702-705. doi:10.1109/lpt.2014.2303169

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2013


Transistor Laser for Electronic-Photonic Integrated Circuits

Author : Milton Feng, Nick Holonyak
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Date of Conference: 13-16 Oct. 2013; Date Added to IEEE Xplore: 11 November 2013

Citation: Feng, M., & Holonyak, N. (2013). Transistor Laser for Electronic-Photonic Integrated Circuits. 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). doi:10.1109/csics.2013.6659247

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50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]

Author : M. George Craford, Russell D. Dupuis, Milton Feng, Fred A. Kish, Joy Laskar
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013; Page(s): 2154 - 2157; Date of Publication: 16 September 2013

Citation: Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A., & Laskar, J. (2013). 50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]. Proceedings of the IEEE, 101(10), 2154-2157. doi:10.1109/jproc.2013.2274908

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850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission

Author : Fei Tan, Mong Kai Wu, Michael Liu, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters (Volume: 26, Issue: 3, Feb.1, 2014)
Publication Year: 2013; Page(s): 289 - 292; Date of Publication: 5 September 2013

Citation: Tan, F., Wu, M., Liu, M., Feng, M., & Holonyak, N. (2014). 850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission. IEEE Photonics Technology Letters, 26(3), 289-292. doi:10.1109/lpt.2013.2280726

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The Transistor Laser: Theory and Experiment

Author : Han Wui Then, Milton Feng, Nick Holonyak
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013; Page(s): 2271 - 2298; Date of Publication: 28 August 2013

Citation: Then, H. W., Feng, M., & Holonyak, N. (2013). The Transistor Laser: Theory and Experiment. Proceedings of the IEEE, 101(10), 2271-2298. doi:10.1109/jproc.2013.2274935

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The III–V Alloy p–n Diode Laser and LED Ultimate Lamp

Author : Nick Holonyak
Proceedings of the IEEE (Volume: 101, Issue: 10, Oct. 2013)
Publication Year: 2013; Page(s): 2158 - 2169; Date of Publication: 22 August 2013

Citation: Holonyak, N. (2013). The III–V Alloy p–n Diode Laser and LED Ultimate Lamp. Proceedings of the IEEE, 101(10), 2158-2169. doi:10.1109/jproc.2013.2274909

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Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Author : Rohan Bambery, Fei Tan, Milton Feng, John M. Dallesasse, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 25, Issue: 9, May 1, 2013 )
Publication Year: 2013; Page(s): 859 - 862; Date of Publication: 20 March 2013

Citation: Bambery, R., Tan, F., Feng, M., Dallesasse, J. M., & Holonyak, N. (2013). Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature. IEEE Photonics Technology Letters, 25(9), 859-862. doi:10.1109/lpt.2013.2252887

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2012


Voltage Modulation of a Vertical Cavity Transistor Laser Via Intra-Cavity Photon-Assisted Tunneling

Author : Mong Kai Wu, Milton Feng, and Nick Holonyak, Jr.
Appl. Phys. Lett. 101, 081102 (2012)
Received: 4 June 2012; Accepted: 18 June 2012; Published online : 20 August 2012

Citation: Wu, M. K., Feng, M., & Holonyak, N. (2012). Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling. Applied Physics Letters, 101(8), 081102. doi:10.1063/1.4745791

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Surface Emission Vertical Cavity Transistor Laser

Author : Mong-Kai Wu, Milton Feng, Nick Holonyak
IEEE Photonics Technology Letters ( Volume: 24, Issue: 15, Aug.1, 2012 )
Publication Year: 2012; Page(s): 1346 - 1348; Date of Publication: 08 June 2012

Citation: Wu, M., Feng, M., & Holonyak, N. (2012). Surface Emission Vertical Cavity Transistor Laser. IEEE Photonics Technology Letters, 24(15), 1346-1348. doi:10.1109/lpt.2012.2203356

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2011


The transistor laser

Author : Milton Feng and Nick Holonyak, Jr.
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)
Date of Conference: 22-26 May 2011; Date Added to IEEE Xplore: 07 July 2011

Citation: Feng, M., & Holonyak, N. (2011). The transistor laser. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). doi:10.1109/cleoe.2011.5942547

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Bandfilling and Photon-Assisted Tunneling In A Quantum-Well Transistor Laser

Author : Milton Feng, Rohan Bambery and Nick Holonyak, Jr.
Appl. Phys. Lett. 98, 123505 (2011)
Received : 20 January 2011; Accepted : 4 March 2011; Published online : 22 March 2011

Citation: Feng, M., Bambery, R., & Holonyak, N. (2011). Bandfilling and photon-assisted tunneling in a quantum-well transistor laser. Applied Physics Letters, 98(12), 123505. doi:10.1063/1.3569949

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InP/InAIGaAs Light-Emitting Transistors And Transistor Lasers With A Carbon-Dopes Base Layer

Author : Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, Forest Dixon, Milton Feng, and Nick Holonyak
J. Appl. Phys. 109, 063106 (2011)
Received : 5 January 2011; Accepted : 2 February 2011; Published online : 21 March 2011

Citation: Huang, Y., Ryou, J., Dupuis, R. D., Dixon, F., Feng, M., & Holonyak, N. (2011). InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer. Journal of Applied Physics, 109(6), 063106. doi:10.1063/1.3561368

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Temperature Dependence Of a High-Performance Narrow-Stripe (1 μm) Single Quantum-Well Transistor Laser

Author : Milton Feng, Nick Holonyak, Jr. and Adam James
Appl. Phys. Lett. 98, 051107 (2011)
Received : 18 August 2010; Accepted : 31 August 2010; Published online : 3 February 2011

Citation: Feng, M., Holonyak, N., & James, A. (2011). Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser. Applied Physics Letters, 98(5), 051107. doi:10.1063/1.3528206

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2010


Design And Operation Of Distributed Feedback Transistor Lasers

Author : Forest Dixon, Milton Feng and Nick Holonyak, Jr.
J. Appl. Phys. 108, 093109 (2010)
Received : 15 June 2010; Accepted : 22 September 2010; Published online : 4 November 2010

Citation: Dixon, F., Feng, M., & Holonyak, N. (2010). Design and operation of distributed feedback transistor lasers. Journal of Applied Physics, 108(9), 093109. doi:10.1063/1.3504608

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Stochastic Base Doping And Quantum-Well Enhancement Of Recombination In An n-p-n Light-Emitting Transistor Or Transistor Laser

Author : Han Wui Then, Choa Hsin Wu, Milton Feng, Nick Holonyak, Jr. and Gabriel Walter
Appl. Phys. Lett. 96, 263505 (2010)
Received : 12 April 2010; Accepted : 8 June 2010; Published online :28 June 2010

Citation: Then, H. W., Wu, C. H., Feng, M., Holonyak, N., & Walter, G. (2010). Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96(26), 263505. doi:10.1063/1.3458708

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Distributed Feedback Transistor Laser

Author : Forest Dixon, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 96, 241103 (2010)
Received : 5 May 2010; Accepted : 24 May 2010; Published online : 14 June 2010

Citation: Dixon, F., Feng, M., & Holonyak, N. (2010). Distributed feedback transistor laser. Applied Physics Letters, 96(24), 241103. doi:10.1063/1.3453656

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Microwave Circuit Model Of The Three-Port Transistor Laser

Author : Han Wui Then, Milton Feng and Nick Holonyak, Jr.
J. Appl. Phys. 107, 094509 (2010)
Received : 10 December 2009; Accepted : 23 February 2010; Published online : 10 May 2010

Citation: Then, H. W., Feng, M., & Holonyak, N. (2010). Microwave circuit model of the three-port transistor laser. Journal of Applied Physics, 107(9), 094509. doi:10.1063/1.3371802

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Physics Of Base Charge Dynamics In The Three Port Transistor Laser

Author : Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 96, 113509 (2010)
Received : 30 October 2009; Accepted : 24 February 2010; Published online :17 March 2010

Citation: Then, H. W., Feng, M., & Holonyak, N. (2010). Physics of base charge dynamics in the three port transistor laser. Applied Physics Letters, 96(11), 113509. doi:10.1063/1.3364143

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2009


4-GHz Modulation Bandwidth of Integrated 2X2 LED Array

Author : Choa Hsin Wu, Gabriel Walter , Han Wui Then, Nick Holonyak Jr. and Milton Feng
IEEE Photonics Technology Letters (Volume: 21, Issue: 24, Dec.15, 2009)
Publication Year: 2009; Page(s): 1834 – 1836; Date of Publication : 10 November 2009

Citation: Wu, C., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). 4-GHz Modulation Bandwidth of Integrated 2X2 LED Array. IEEE Photonics Technology Letters, 21(24), 1834-1836. doi:10.1109/lpt.2009.2034385

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Resonance-Free Frequency Response Of a Semiconductor Laser

Author : Milton Feng, Han Wui Then, Nick Holonyak, Jr., Adam James and Gabriel Walter
Appl. Phys. Lett. 95, 033509 (2009)
Received: 16 May 2009; Accepted: 29 June 2009; Published online : 21 July 2009

Citation: Feng, M., Then, H. W., Holonyak, N., Walter, G., & James, A. (2009). Resonance-free frequency response of a semiconductor laser. Applied Physics Letters, 95(3), 033509. doi:10.1063/1.3184580

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4.3 GHz Optical Bandwidth Light Emitting Transistor

Author : Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 241101 (2009)
Received: 29 January 2009; Accepted: 17 April 2009; Published online : 15 June 2009

Citation: Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94(24), 241101. doi:10.1063/1.3153146

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Tilted-Charge High Speed (7 GHz) Light Emitting Diode

Author : Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 231125 (2009)
Received: 27 April 2009; Accepted: 26 May 2009; Published online : 12 June 2009

Citation: Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). Tilted-charge high speed (7 GHz) light emitting diode. Applied Physics Letters, 94(23), 231125. doi:10.1063/1.3154565

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Device performance of light emitting transistors with C-doped and Zn-doped base layers

Author : Y. Huang, J.-H. Ryou, R. D. Dupuis, F. Dixon, N. Holonyak, M. Feng
Indium Phosphide & Related Materials, 2009. IPRM '09.(IEEE)
Date of Conference: 10-14 May 2009; Date Added to IEEE Xplore: 29 May 2009

Citation: Huang, Y., Ryou, J., Dupuis, R. D., Dixon, F., Holonyak, N., & Feng, M. (2009). Device performance of light emitting transistors with C-doped and Zn-doped base layers. 2009 IEEE International Conference on Indium Phosphide & Related Materials. doi:10.1109/iciprm.2009.5012449

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Scaling of Light Emitting Transistor For Multigigahertz Optical Bandwidth

Author : Choa Hsin Wu, Gabriel Walter, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 171101 (2009)
Received: 2 March 2009; Accepted: 9 April 2009; Published online : 27 April 2009

Citation: Wu, C. H., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). Scaling of light emitting transistor for multigigahertz optical bandwidth. Applied Physics Letters, 94(17), 171101. doi:10.1063/1.3126642

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High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes.

Author : Coskun Kocabas, Simon Dunham, Qing Cao, Kurt Cimino, Xinning Ho, Hoon-Sik Kim, Dale Dawson, Joseph Payne, Mark Stuenkel, Hong Zhang, Tony Banks, Milton Feng, Slava V Rotkin, John A Rogers
Nano Lett., 2009, 9 (5), pp 1937–1943
Received: 13 January 2009; Published in print: 13 May 2009; Published online : 8 April 2009

Citation: Kocabas, C., Dunham, S., Cao, Q., Cimino, K., Ho, X., Kim, H. et al. (2009). High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes. Nano Letters, 9(5), 1937-1943. doi:10.1021/nl9001074

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Electrical-Optical Signal Mixing and Multiplication (2 →22 GHz) With a Tunnel Junction Transistor Laser

Author : Han Wui Then, Chao Hsin Wu, Gabriel Walter, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 101114 (2009)
Received: 16 January 2009; Accepted: 26 February 2009; Published online : 13 March 2009

Citation: Then, H. W., Wu, C. H., Walter, G., Feng, M., & Holonyak, N. (2009). Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser. Applied Physics Letters, 94(10), 101114. doi:10.1063/1.3100294

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Tunnel Junction Transistor Laser

Author : Han Wui Then, Nick Holonyak Jr. and Milton Feng, Choa Hsin Wu, and Gabriel Walter
Appl. Phys. Lett. 94, 041118 (2009)
Received: 20 December 2008; Accepted: 9 January 2009; Published online : 29 January 2009

Citation: Feng, M., Holonyak, N., Then, H. W., Wu, C. H., & Walter, G. (2009). Tunnel junction transistor laser. Applied Physics Letters, 94(4), 041118. doi:10.1063/1.3077020

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Bandwidth Extension By Trade-Off Of Electrical and Optical Gain In a Transistor Laser: Three - Terminal Control

Author :Han Wui Then, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 94, 013509 (2009)
Received: 19 November 2008; Accepted: 18 December 2008; Published online : 9 January 2009

Citation: Then, H. W., Feng, M., & Holonyak, N. (2009). Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control. Applied Physics Letters, 94(1), 013509. doi:10.1063/1.3068489

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2008


Optical Bandwidth Enhancement Of Heterojunction Bipolar Transistor Laser Operation With An Auxiliary Base Signal

Author : Han Wui Then, Nick Holonyak, Jr., Milton Feng, and Gabriel Walter
Appl. Phys. Lett. 93, 163504 (2008)
Received: 30 July 2008; Accepted: 24 September 2008; Published online : 22 October 2008

Citation: Then, H. W., Walter, G., Feng, M., & Holonyak, N. (2008). Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal. Applied Physics Letters, 93(16), 163504. doi:10.1063/1.3000635

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Transistor Laser With Emission Wavelength At 1544 nm

Author : Forest Dixon, Milton Feng, Nick Holonyak, Jr., Yong Huang, Xue Bing Zhang, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 93, 021111 (2008)
Received: 16 April 2008; Accepted: 25 June 2008; Published online : 15 July 2008

Citation: Dixon, F., Feng, M., Holonyak, N., Huang, Y., Zhang, X. B., Ryou, J. H., & Dupuis, R. D. (2008). Transistor laser with emission wavelength at 1544nm. Applied Physics Letters, 93(2), 021111. doi:10.1063/1.2958228

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InAlGaAs/InP Light-Emitting Transistors Operating Near 1.55 µm

Author : Yong Huang, Xue-Bing Zhang, Jae-Hyun Ryou, Russell D. Dupuis, Forest Dixon, Nick Holonyak, Jr., and Milton Feng
Appl. Phys. 103 114505 (2008)
Received: 31 December 2007; Accepted: 4 April 2008; Published online : 9 June 2008

Citation: Huang, Y., Zhang, X., Ryou, J., Dupuis, R. D., Dixon, F., Holonyak, N., & Feng, M. (2008). InAlGaAs∕InP light-emitting transistors operating near 1.55μm. Journal of Applied Physics, 103(11), 114505. doi:10.1063/1.2939243

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2007


Collector Characteristics and The Differential Optical Gain Of a Quantum-Well Transistor Laser

Author : Han Wui Then, Gabriel Walter, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 91, 243508 (2007)
Received: 24 October 2007; Accepted: 22 November 2007; Published online : 12 December 2007

Citation: Then, H. W., Walter, G., Feng, M., & Holonyak, N. (2007). Collector characteristics and the differential optical gain of a quantum-well transistor laser. Applied Physics Letters, 91(24), 243508. doi:10.1063/1.2824817

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Modulation Of High Current Gain (β>49) Light-Emitting InGaN/GaN Heterojunction Bipolar Transistors

Author : B. F. Chu-Kung, Chao Hsin Wu, Gabriel Walter, Milton Feng, Nick Holonyak, Jr., T. Chung, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 91, 232114 (2007)
Received: 25 October 2007; Accepted: 14 November 2007; Published online : 6 December 2007

Citation: Chu-Kung, B. F., Wu, C. H., Walter, G., Feng, M., Holonyak, N., Chung, T. et al. (2007). Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors. Applied Physics Letters, 91(23), 232114. doi:10.1063/1.2821380

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Optical Bandwidth Enhancement By Operation And Modulation Of The First Excited State Of a Transistor Laser

Author : Han Wui Then, Nick Holonyak Jr. and Milton Feng
Appl. Phys. Lett. 91, 183505 (2007)
Received: 13 September 2007; Accepted: 9 October 2007; Published online : 30 October 2007

Citation: Then, H. W., Feng, M., & Holonyak, N. (2007). Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Applied Physics Letters, 91(18), 183505. doi:10.1063/1.2805014

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Charge Control Analysis Of Transistor Laser Operation

Author :Milton Feng, Nick Holonyak, Jr., Han Wui Then and Gabriel Walter
Appl. Phys. Lett. 91, 053501 (2007)
Received: 1 May 2007; Accepted: 7 July 2007; Published online : 30 July 2007

Citation: Feng, M., Holonyak, N., Then, H. W., & Walter, G. (2007). Charge control analysis of transistor laser operation. Applied Physics Letters, 91(5), 053501. doi:10.1063/1.2767172

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Experimental Determination Of The Effective Minority Carrier Lifetime In The Operation Of a Quantum-Well n-p-n Heterojunction Bipolar Light-Emitting Transistor Of Varying Base Quantum- Well Design and Dopping

Author : Han Wui Then, Nick Holonyak, Jr., Milton Feng, and Chao Hsin Wu
Appl. Phys. Lett. 91, 033505 (2007)
Received: 7 June 2007; Accepted: 22 June 2007; Published online : 18 July 2007

Citation: Then, H. W., Feng, M., Holonyak, N., & Wu, C. H. (2007). Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping. Applied Physics Letters, 91(3), 033505. doi:10.1063/1.2759263

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Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser

Author : Adam James, Nick Holonyak, Jr., Milton Feng and Gabriel Walter
Photonics Technology Letters, IEEE
Volume: 19 Issue: 9 May 1, 2007

Citation: James, A., Holonyak, N., Feng, M., & Walter, G. (2007). Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser. IEEE Photonics Technology Letters, 19(9), 680-682. doi:10.1109/lpt.2007.895049

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Photon-Assisted Breakdown, Negative Resistance, and Switching In a Quantum-Well Transistor Laser

Author : Adam James, Gabriel Walter, Milton Feng and Nick Holonyak, Jr
Appl. Phys. Lett. 90, 152109 (2007)
Received: 26 January 2007; Accepted: 8 March 2007; Published online : 11 April 2007

Citation: James, A., Walter, G., Feng, M., & Holonyak, N. (2007). Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser. Applied Physics Letters, 90(15), 152109. doi:10.1063/1.2721364

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Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser

Author : Adam James, Nick Holonyak, Milton Feng, Gabriel Walter
IEEE Photonics Technology Letters (Volume: 19, Issue: 9, May1, 2007)
Publication Year: 2007, Page(s): 680 - 682, Date of Publication: 10 April 2007

Citation: James, A., Holonyak, N., Feng, M., & Walter, G. (2007). Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser. IEEE Photonics Technology Letters, 19(9), 680-682. doi:10.1109/lpt.2007.895049

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Chirp In a Transistor Laser: Franz-Keldysh Reduction Of The Line Width Enhancement

Author :Gabriel Walter, Adam James, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 90, 091109 (2007)
Received: 30 October 2006; Accepted: 24 January 2007; Published online : 1 March 2007

Citation: Walter, G., James, A., Holonyak, N., & Feng, M. (2007). Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement. Applied Physics Letters, 90(9), 091109. doi:10.1063/1.2709964

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2006


Carrier Lifetime and Modulation Bandwidth Of a Quantum Well AlGaAs/InGaP/GaAs/InGaAs Transistor Laser

Author : Milton Feng, Nick Holonyak, Jr., Adam James, Kurt Cimino, Gabriel Walter and Richard Chan
Appl. Phys. Lett. 89, 113504 (2006)
Received: 9 May 2006; Accepted: 25 July 2006; Published online : 12 September 2006

Citation: Feng, M., Holonyak, N., James, A., Cimino, K., Walter, G., & Chan, R. (2006). Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser. Applied Physics Letters, 89(11), 113504. doi:10.1063/1.2346369

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Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting Transistors

Author : B. F. Chu-Kung,Milton Feng,Gabriel Walter,Nick Holonyak,T. Chung,Jae Hyun Ryou, J. Limb,D. Yoo, S.-C. Shen,Russell D. Dupuis,D. Keogh,and P. M. Asbeck
Appl. Phys. Lett. 89, 082108 (2006)
Received: 24 February 2006; Accepted: 27 June 2006; Published online : 25 August 2006

Citation: Chu-Kung, B. F., Feng, M., Walter, G., Holonyak, N., Chung, T., Ryou, J. et al. (2006). Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors. Applied Physics Letters, 89(8), 082108. doi:10.1063/1.2336619

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High-Speed (/spl ges/1 GHz) Electrical and Optical Adding, Mixing, and Processing of Square-Wave Signals With a Transistor Laser

Author :Milton Feng, Nick Holonyak, Jr., Richard Chan, Adam James and Gabriel Walter
IEEE Photonics Technology Letters (Volume: 18, Issue: 11, June 2006)
Publication Year: 2006, Page(s): 1240 - 1242, Date of Publication: 26 June 2006

Citation: Feng, M., Holonyak, N., Chan, R., James, A., & Walter, G. (2006). High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser. IEEE Photonics Technology Letters, 18(11), 1240-1242. doi:10.1109/lpt.2006.875333

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Collector Breakdown In The Heterojunction Bipolar Transistor Laser

Author : Gabiel Walter, Adam James, Nick Holonyak, Jr., Milton Feng, and Richard Chan
Appl. Phys. Lett. 88, 232105 (2006)
Received: 15 March 2006; Accepted: 15 April 2006; Published online : 6 June 2006

Citation: Walter, G., James, A., Holonyak, N., Feng, M., & Chan, R. (2006). Collector breakdown in the heterojunction bipolar transistor laser. Applied Physics Letters, 88(23), 232105. doi:10.1063/1.2210079

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Collector Current Map of Gain and Stimulated Recombination On The Base Quantum Well Transision of Transistor Laser

Author : Riched Chan, Milton Feng, Nick Holonyak, Jr., Adam James, and Gabriel Walter
Appl. Phys. Lett. 88, 143508 (2006)
Received: 30 November 2005; Accepted: 28 February 2006; Published online : 5 April 2006

Citation: Chan, R., Feng, M., Holonyak, N., James, A., & Walter, G. (2006). Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Applied Physics Letters, 88(14), 143508. doi:10.1063/1.2191448

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Signal Mixing in a Multiple Input Transistor Laser Near Threshold

Author : Milton Feng, Nick Holonyak, Jr., Richard Chan, Adam James, and Gabriel Walter
Appl. Phys. Lett. 88, 063509 (2006)
Received: 14 October 2005; Accepted: 9 December 2005; Published online : 8 February 2006

Citation: Feng, M., Holonyak, N., Chan, R., James, A., & Walter, G. (2006). Signal mixing in a multiple input transistor laser near threshold. Applied Physics Letters, 88(6), 063509. doi:10.1063/1.2171834

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The Transistor Laser

Author :Milton Feng, Nick Holonyak, Jr
Spectrum, IEEE
Volume: 43 Issue: 2 Feb. 2006.

Citation: Holonyak, N., & Feng, M. (2006). The Transistor Laser. IEEE Spectrum, 43(2), 50-55. doi:10.1109/mspec.2006.1584362

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Visible Spectrum Light-Emitting Transistors

Author : Forest Dixon, Richard Chan, Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Xue Bing Zhang, Jae Hyun Ryou, and Russell D. Dupuis
Appl. Phys. Lett. 88, 012108 (2006)
Received: 21 September 2005; Accepted: 3 November 2005; Published online : 5 January 2006

Citation: Dixon, F., Chan, R., Walter, G., Holonyak, N., Feng, M., Zhang, X. B., . . . Dupuis, R. D. (2006). Visible spectrum light-emitting transistors. Applied Physics Letters, 88(1), 012108. doi:10.1063/1.2158704

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2005


Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition

Author : X.B. Zhang, J.H. Ryo, G. Walter, N. Holonyak, R.D. Dupuis
International Conference on Indium Phosphide and Related Materials, 2005.
Date of Conference: 8-12 May 2005; Date Added to IEEE Xplore: 24 October 2005

Citation: Zhang, X., Ryou, J., Walter, G., Holonyak, N., & Dupuis, R. (n.d.). Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition. International Conference on Indium Phosphide and Related Materials, 2005. doi:10.1109/iciprm.2005.1517508

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Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

Author : Jungho Kim, P.K. Kondratko, Shun Lien Chuang, G. Walter, N. Holonyak, R.D. Heller, X.B. Zhang, R.D. Dupuis
IEEE Journal of Quantum Electronics (Volume: 41, Issue: 11, Nov. 2005)
Publication Year: 2005, Page(s): 1369 - 1379, Date of Publication: 24 October 2005

Citation: Kim, J., Kondratko, P., Chuang, S. L., Walter, G., Holonyak, N., Heller, R., et al. (2005). Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing. IEEE Journal of Quantum Electronics, 41(11), 1369-1379. doi:10.1109/jqe.2005.857067

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Room Temperature Continuous Wave Operation of a Heterojunction Bipolar Transistor Laser

Author : Milton Feng, Nick Holonyak, Jr., Gabriel Walter, and Richard Chan
Appl. Phys. Lett. 87, 131103 (2005)
Received: 11 July 2005; Accepted: 9 August 2005; Published online : 20 September 2005

Citation: Feng, M., Holonyak, N., Walter, G., & Chan, R. (2005). Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Applied Physics Letters, 87(13), 131103. doi:10.1063/1.2058213

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Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

Author : P.K. Kondratko, Shun-Lien Chuang, G. Walter, N. Holonyak, R.D. Heller, Xuebing Zhang, R.D. Dupuis
IEEE Photonics Technology Letters (Volume: 17, Issue: 5, May 2005)
Publication Year:2005, Page(s): 938 - 940, Date of Publication: 25 April 2005

Citation: Kondratko, P., Chuang, S., Walter, G., Holonyak, N., Heller, R., Zhang, X., & Dupuis, R. (2005). Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser. IEEE Photonics Technology Letters, 17(5), 938-940. doi:10.1109/lpt.2005.844328

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Microwave Operation and Modulation of a Transistor Laser

Author : Richard Chan, Milton Feng, Nick Holonyak, Jr., and Gabriel Walter
Appl. Phys. Lett. 86, 131114 (2005)
Received: 16 November 2004; Accepted: 7 February 2005; Published online : 25 March 2005

Citation: Chan, R., Feng, M., Holonyak, N., & Walter, G. (2005). Microwave operation and modulation of a transistor laser. Applied Physics Letters, 86(13), 131114. doi:10.1063/1.1889243

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2004


Tunneling injection quantum-dot laser: Theory and experiment

Author : S.L. Chuang, P.K. Kondratko, J. Kim, G. Walter, J. Elkow, N. Holonyak, R.D. Heller, X.B. Zhang, R.D. Dupuis
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004.
Date of Conference: 11 Nov. 2004; Date Added to IEEE Xplore: 20 December 2004

Citation: Chuang, S., Kondratko, P., Kim, J., Walter, G., Elkow, J., Holonyak, N., et al. (2004). Tunneling injection quantum-dot laser: theory and experiment. The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004. doi:10.1109/leos.2004.1363392

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Laser Operation of a Heterojunction Bipolar Light-Emitting Transistor

Author : Gabiel Walter, Nick Holonyak, Jr., Milton Feng, and Richard Chan
Appl. Phys. Lett. 85, 4768 (2004)
Received: 21 July 2004; Accepted: 23 August 2004

Citation: Walter, G., Holonyak, N., Feng, M., & Chan, R. (2004). Laser operation of a heterojunction bipolar light-emitting transistor. Applied Physics Letters, 85(20), 4768-4770. doi:10.1063/1.1818331

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Type-II GaAsSb/InP Heterojunction Bipolar Light-Emitting Transistor

Author : Milton Feng, Nick Holonyak, Jr., B. Chu-Kung, Gabriel Walter, and Riched Chan
Appl. Phys. Lett. 84, 4792 (2004)
Received: 17 February 2004; Accepted: 15 April 2004 ; Published online: 21 May 2004

Citation: Feng, M., Holonyak, N., Chu-Kung, B., Walter, G., & Chan, R. (2004). Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84(23), 4792-4794. doi:10.1063/1.1760595

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Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor

Author : Milton Feng, Nick Holonyak, Jr., and Riched Chan
Appl. Phys. Lett. 84, 1952 (2004)
Received: 17 November 2003; Accepted: 7 January 2004

Citation: Feng, M., Holonyak, N., & Chan, R. (2004). Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84(11), 1952-1954. doi:10.1063/1.1669071

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